The IR2108SPBF is a high voltage, high-speed power MOSFET and IGBT driver IC component designed by Infineon Technologies. It offers various key features that make it suitable for a wide range of applications. Here is an overview of the IC and its significant features:
1. High Voltage Level-Shifting: The IR2108SPBF can tolerate high input voltage fluctuations up to 600 volts, making it capable of driving high-power MOSFETs and IGBTs.
2. Floating Channel Design: It incorporates a floating channel feature that allows it to drive both high-side and low-side power switches independently. This flexibility enables optimal control in various power electronic applications.
3. Independent Output Options: The IC provides two outputs, namely, OUTA and OUTB. These outputs can source and sink current up to 250 mA and have their own dedicated VCC supply pins. This independence ensures reliable switching and efficient driving of power devices.
4. Integrated Bootstrap Diode: The IR2108SPBF integrates a high voltage bootstrap diode. The bootstrap circuitry eliminates the requirement for an additional external diode, saving space and reducing complexity in system designs.
5. Input Logic Compatibility: It accepts TTL and CMOS logic input signals, enabling seamless integration with various control circuits and microcontrollers. The input signal can be as low as 3.3V, making it compatible with standard logic devices
