The DS1245AB-100 is a non-volatile, 102,400-bit static random access memory (SRAM) integrated circuit (IC) component developed by Maxim Integrated. This IC combines the functionalities of both a high-speed SRAM and an EEPROM, making it ideal for applications that require both non-volatility and fast read/write operations.
One of the key features of the DS1245AB-100 is its non-volatile nature, which enables it to retain data even when power is lost. This is achieved through the integration of an internal electrically erasable programmable read-only memory (EEPROM) array. This feature ensures that critical data remains intact during system power cycling.
The DS1245AB-100 operates at a maximum access time of 100ns, providing efficient and speedy read/write operations. It offers a wide voltage range from 4.5V to 5.5V, making it compatible with various system configurations
