The CY7S1049G30-10VXI is an integrated circuit (IC) component manufactured by Cypress Semiconductor. It is a high-performance synchronous static random access memory (SRAM) designed for various applications. Below are the key features and an overview of this IC component:
1. Memory Capacity: The CY7S1049G30-10VXI offers a memory capacity of 4 megabits (512K x 8 bits). This allows it to store a significant amount of data and perform complex tasks efficiently.
2. Organization: The memory organization of this IC component is configured as 512K words, with each word consisting of 8 bits. This structure facilitates easy access and manipulation of data stored in the memory array.
3. Synchronous Operation: The IC operates synchronously, meaning it uses a clock signal to synchronize the reading and writing operations. This synchronous operation ensures that data transfers occur precisely and allows for high-speed operation.
4. Low-Power Design: The CY7S1049G30-10VXI is built with a low-power design, making it suitable for battery-powered or energy-efficient applications. The IC optimizes power consumption while still delivering excellent performance.
5. Wide Operating Voltage Range: This IC component supports a wide operating voltage range from 1.65V to 2.2V. This versatility enables its usage across different systems and devices with varying power requirements
