BFR35APE6327

The BFR35APE6327 is a discrete semiconductor component known for its high performance and reliability in RF amplifier and oscillator circuits. This NPN silicon RF transistor is designed for operation in the HF to UHF frequency range, making it ideal for use in applications such as mobile communication devices, wireless communication systems, and radar systems. Key features of the BFR35APE6327 include a high transition frequency of up to 12 GHz, a low noise figure, and a high current gain. This allows for efficient amplification of RF signals with minimal distortion and noise. The transistor also has a low thermal resistance, which helps to maintain stable performance over a wide temperature range. In addition, the BFR35APE6327 is housed in a SOT343R package, which offers excellent thermal performance and compact size, making it well-suited for use in space-constrained applications. The transistor is RoHS compliant and has a lead-free finish, making it environmentally friendly. Overall, the BFR35APE6327 is a versatile and high-quality discrete semiconductor component that is well-suited for a variety of RF applications where high performance and reliability are essential