The BFR360L3E6765 is a high-frequency, low-noise NPN silicon transistor manufactured by Infineon Technologies. This discrete semiconductor component is commonly used in applications that require high performance in RF amplification and oscillation circuits.
Key features of the BFR360L3E6765 include a high power gain, low noise figure, and excellent linearity. With a frequency range of up to 6 GHz, this transistor is ideal for use in wireless communication systems, radar systems, and other high-frequency applications.
The BFR360L3E6765 is housed in a small SOT343 package, making it suitable for compact circuit designs. It also has a maximum collector current of 50 mA and a maximum power dissipation of 250 mW, ensuring reliable performance in demanding environments.
Overall, the BFR360L3E6765 is a versatile and high-quality semiconductor component that offers excellent performance in high-frequency applications
