IDT71V67802S133PF

Name: IDT71V67802S133PF
Brand: Renesas Electronics
SKU: C4620F-DS
Availability: InStock

IC SRAM 9MBIT PARALLEL 100TQFP

1 : $0.0000

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Dasenic Part Number

C4620F-DS

Manufacturer

Renesas Electronics

Manufacturer Part #

IDT71V67802S133PF

Customer Reference

Datasheet

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56 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

100-LQFP

Quantity

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Manufacturer	Renesas Electronics
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	0°C ~ 70°C (TA)
Package / Case	100-LQFP
Technology	SRAM - Synchronous, SDR
Supplier Device Package	100-TQFP (14x14)
Memory Size	9Mb (512K x 18)
Memory Type	Volatile
Voltage - Supply	3.135V ~ 3.465V
Clock Frequency	133 MHz
Access Time	4.2 ns
Memory Format	SRAM
Memory Interface	Parallel

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	Vendor is not defined
US ECCN	Provided as per user requirements
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The IC component IDT71V67802S133PF is a synchronous, high-speed 3.3V CMOS SRAM (Static Random-Access Memory) device. It offers a capacity of 524,288 words by 16-bits, which amounts to a total storage capability of 8,388,608 bits. This IC is primarily used in applications that require high-performance data storage and retrieval. Key Features: 1. Synchronous Operation: The IDT71V67802S133PF operates synchronously, allowing for precise data transfer and synchronization between the memory device and the microprocessor. 2. High-Speed Performance: With a synchronous design, this component offers fast access times, with a maximum access time of 6 ns. It can support high-speed data transfer rates, making it suitable for applications that require fast and efficient data processing. 3. Low Power Consumption: The IDT71V67802S133PF is designed to consume low power, making it energy-efficient and suitable for battery-powered devices. It has a standby current of only 8 mA and an operating current of 110 mA. 4. High-Density Memory: This IC component provides a significant amount of memory in a compact form factor. With a capacity of 524,288 words by 16-bits, it offers a large storage space for applications that require substantial data storage