The IC component IDT71V424S12YI8 is a high-speed asynchronous static random-access memory (SRAM) that offers a storage capacity of 4 Megabits (4M) organized as 524,288 words of 8 bits each. It is manufactured by Integrated Device Technology (IDT), a leading semiconductor company.
Key features of the IDT71V424S12YI8 include:
1. High-speed performance: The IDT71V424S12YI8 operates at a maximum clock frequency of 166 MHz, enabling quick and efficient data access.
2. Asynchronous operation: This SRAM supports asynchronous read and write operations, eliminating the need for a clock signal. It makes the chip versatile and compatible with various systems.
3. Low power consumption: The IDT71V424S12YI8 has a standby power consumption of less than 1 mW, which reduces power requirements in battery-powered devices and saves energy in other applications.
4. Wide voltage range: It operates at a voltage range of 3.0V to 3.6V, ensuring compatibility with different power supply configurations.
5. High-density and compact design: The chip integrates 4 Megabits of memory in a small form factor, providing ample storage capacity for a range of applications. It comes in a 44-pin thin small outline package (TSOP) to optimize board space utilization
