IDT71V416YS12YI8

The IC component IDT71V416YS12YI8 is a high-speed 16M (1M x 16) synchronous static random access memory (SRAM) produced by Integrated Device Technology (IDT). It offers a range of features that make it suitable for various applications. Here is an overview of its key features: 1. Memory Capacity: The IDT71V416YS12YI8 provides a memory capacity of 16M bits, organized as 1M words by 16 bits. This allows for efficient storage and retrieval of data. 2. Synchronous Operation: The component operates synchronously with a clock signal. This ensures reliable and precise timing for read and write operations. 3. High-Speed Performance: With a synchronous interface and access time of 12 ns, the IDT71V416YS12YI8 delivers fast and efficient data handling. This is essential for demanding applications that require quick data access. 4. Low Power Consumption: The component is designed to minimize power consumption while maintaining high performance. This makes it suitable for power-sensitive devices or battery-powered applications. 5. Burst Mode Operation: The IDT71V416YS12YI8 supports Burst Mode operation, allowing rapid consecutive access to memory locations. This feature enhances memory utilization and improves overall system performance. 6. Byte Write Enable: The component includes a byte write enable feature, enabling byte-level data manipulation. This provides flexibility for partial memory updates and reduces unnecessary write operations