IDT71V416L10YI8

The IDT71V416L10YI8 is an integrated circuit (IC) component developed by Integrated Device Technology (IDT). It is a high-speed asynchronous static RAM (SRAM) with a storage capacity of 4 megabits (4M) or 512 kilobytes (512K) organized as 524,288 words by 8 bits. Here are some key features of this IC component: 1. High Speed: The IDT71V416L10YI8 operates at a fast access time of 10 nanoseconds (ns). This enables quick and efficient data retrieval and storage. 2. Asynchronous Operation: It is designed for asynchronous access, meaning it does not require a clock signal for read and write operations. This feature makes it suitable for various applications where external timing control is not available or necessary. 3. Low Power Consumption: The IC component is built with low power CMOS technology, resulting in efficient power consumption. This feature extends battery life and reduces power-related costs. 4. 3.3V Operation: The IDT71V416L10YI8 operates at a supply voltage of 3.3 volts (V). This voltage range is commonly used in many modern electronic systems, offering compatibility with a wide range of devices. 5. Byte-Wide Interface: With an 8-bit data bus, the IC supports byte-wide data transactions. This allows for flexible and efficient data communication with other components in the system