IDT71V3576S133PF

The IC component IDT71V3576S133PF is a high-speed, low-power synchronous static RAM (SRAM), designed and manufactured by Integrated Device Technology (IDT). Here are some key features and an overview of this integrated circuit: 1. Overview: - The IDT71V3576S133PF is a 3.3V, 512K x 36-bit high-speed SRAM organized as 2 banks of 256K x 18 bits. - It operates at a maximum frequency of 133 MHz and offers a 9 ns access time, making it suitable for demanding applications that require fast data access. - This component follows the synchronous SRAM architecture, with a synchronous interface that allows for precise control of read and write operations. - The IDT71V3576S133PF is built using CMOS technology, which provides low power consumption and high reliability. 2. Density and Organization: - The IC offers a density of 512 kilobits (Kb), which is organized as 2 banks of 256K x 18 bits. Each bank can be individually accessed or combined for sequential 36-bit wide access. - The organization into two separate banks allows for concurrent read and write operations, offering significant performance advantages. 3. Synchronous Operation: - The IDT71V3576S133PF follows a synchronous design, meaning that it synchronizes all read and write operations with a common clock signal