The IC component IDT71V124SA20TYI8 is a high-performance, low-power asynchronous static RAM (SRAM) device manufactured by Integrated Device Technology (IDT). It is designed for use in a wide range of applications including networking systems, telecommunications, automotive, and industrial equipment.
Key Features:
1. Memory Capacity: The IDT71V124SA20TYI8 offers a total memory capacity of 1 megabit (128K x 8 bits). This makes it suitable for storing large amounts of data and instructions in various applications.
2. Asynchronous Operation: The device operates asynchronously, meaning it does not require a clock signal for read and write operations. This allows for flexible timing control, simplifies interface design, and reduces power consumption.
3. Fast Access Time: The IDT71V124SA20TYI8 has a fast access time of 20 ns. This enables quick retrieval of data from memory, facilitating high-speed data processing and efficient program execution.
4. Low Power Consumption: The device is built using low-power CMOS technology and offers low standby and operating power consumption. This makes it well-suited for battery-powered and energy-efficient devices.
5. Multiple Chip Enable (CE) Pins: The IC component features two Chip Enable (CE) pins, CE1 and CE2. These pins enable flexible memory bank selection, allowing different sections of the memory array to be activated independently
