The IC component 71V3577S85BQ is a high-performance asynchronous static random access memory (SRAM) device. It offers a wide range of features and capabilities that make it suitable for various applications. Here is a brief overview of the key features of this component:
1. Memory Capacity: The 71V3577S85BQ has a memory capacity of 128K x 8 bits, providing a total of 1,048,576 bits of storage. This capacity allows for storing a significant amount of data.
2. High Speed: This IC component is designed to operate at a high speed clock frequency. It offers access times as low as 10 ns, ensuring fast data retrieval and processing.
3. Low Power Consumption: The 71V3577S85BQ is optimized for low power consumption. It operates using a single +3.3V power supply and features automatic power-down when not in use. This makes it suitable for battery-powered devices and power-sensitive applications.
4. Asynchronous Operation: The IC component supports asynchronous operation, which means it does not require a clock signal for data access. It provides control inputs like chip enable (CE), output enable (OE), and write enable (WE) for easy interfacing with other devices.
5. Dual-Ported Architecture: The 71V3577S85BQ features a dual-ported architecture allowing simultaneous data access by two independent systems
