NAND512R3A2SN6E

The IC component NAND512R3A2SN6E is a NAND flash memory module manufactured by a prominent semiconductor company. It serves as a storage solution in various electronic devices, offering high-performance data storage and retrieval capabilities. Here is an overview and some key features of the component: 1. Memory Capacity: The NAND512R3A2SN6E provides a storage capacity of 512 megabits (64 megabytes), which can accommodate a significant amount of data in a compact form factor. 2. Organization: This IC is organized into multiple blocks, pages, and sectors, allowing efficient read and write operations. Each block consists of several pages, and each page is further divided into sectors for data storage. 3. High-Speed Data Transfer: The NAND512R3A2SN6E supports a high-speed data transfer interface, enabling quick access to stored information. This allows for faster read and write operations in electronic devices, enhancing overall device performance. 4. Reliable Data Retention: With advanced error-correcting code (ECC) algorithms, this IC ensures reliable data retention. It can automatically detect and correct errors that may occur during data transfers, ensuring data integrity and reducing the chances of data loss. 5. Low Power Consumption: The NAND512R3A2SN6E is designed with low-power features, enabling efficient power management in electronic devices. It consumes minimal power during both active and standby states, making it ideal for battery-powered devices with limited power resources