MT28F008B5VG-8 TET TR

Name: MT28F008B5VG-8 TET TR
Brand: Micron Technology
SKU: F69505-DS
Availability: InStock

IC FLASH 8MBIT PARALLEL 40TSOP I

1 : $0.0000

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Dasenic Part Number

F69505-DS

Manufacturer

Micron Technology

Manufacturer Part #

MT28F008B5VG-8 TET TR

Customer Reference

Datasheet

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Sample

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68 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

40-TFSOP (0.724", 18.40mm Width)

Quantity

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Manufacturer	Micron Technology
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	-40°C ~ 85°C (TA)
Package / Case	40-TFSOP (0.724", 18.40mm Width)
Technology	FLASH - NOR
Supplier Device Package	40-TSOP I
Memory Size	8Mb (1M x 8)
Memory Type	Non-Volatile
Voltage - Supply	4.5V ~ 5.5V
Access Time	80 ns
Memory Format	FLASH
Memory Interface	Parallel
Write Cycle Time - Word, Page	80ns

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	Vendor is not defined
US ECCN	Provided as per user requirements
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The IC (integrated circuit) component in focus is the MT28F008B5VG-8 TET TR. This component is a Flash memory device that offers high-performance and reliable storage capabilities. Below are some key features of this IC component: 1. Memory Capacity: The MT28F008B5VG-8 TET TR offers a total memory capacity of 8 megabits (1 megabyte). This memory can be used for storing different types of data like code, settings, or other digital information. 2. Organization: The IC is organized into blocks, sectors, and pages. Each block contains a specific number of sectors, and each sector consists of multiple pages. This organization allows for efficient management and access of stored data. 3. Fast Read and Write Speed: This IC component provides a fast read access time of 80 nanoseconds (8-bit). It also offers a fast program and erase time to enable quick and efficient data storage. 4. High Storage Endurance: The MT28F008B5VG-8 TET TR is designed with a high endurance level, allowing for a large number of program and erase cycles throughout its lifetime. This makes it suitable for applications requiring frequent data updates or modifications