M29W400DT55N6

IC FLASH 4MBIT PARALLEL 48TSOP
part number has RoHS
1 : $0.0000

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Dasenic Part Number
324AD8-DS
Manufacturer
Manufacturer Part #
M29W400DT55N6

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83 In Stock

MOQ
1PCS
Delivery Time
Ship Within 48 Hours
Packaging
48-TFSOP (0.724", 18.40mm Width)

Quantity

Get pricing info from knowledgeable sales

ManufacturerMicron Technology
Integrated Circuits (ICs)Memory
Product StatusObsolete
Operating Temperature-40°C ~ 85°C (TA)
Package / Case48-TFSOP (0.724", 18.40mm Width)
TechnologyFLASH - NOR
Supplier Device Package48-TSOP
Memory Size4Mb (512K x 8, 256K x 16)
Memory TypeNon-Volatile
Voltage - Supply2.7V ~ 3.6V
Access Time55 ns
Memory FormatFLASH
Memory InterfaceParallel
Write Cycle Time - Word, Page55ns

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Environmental & Export Classifications
EU RoHS StatusRoHS Compliant
REACH StatusVendor is not defined
US ECCNProvided as per user requirements
China RoHS StatusOrange Symbol: Safe for use during the environmental protection period
Description (v) Features
The M29W400DT55N6 is an IC (Integrated Circuit) component that belongs to the M29W series of flash memory devices produced by STMicroelectronics. This IC is a high-density, non-volatile memory device that is primarily used for data storage in various electronic devices. Below are the key features and an overview of the M29W400DT55N6: 1. Memory Capacity: The M29W400DT55N6 offers a memory capacity of 4 megabits (or 512 kilobytes) organized as 512K words of 8 bits each. This provides ample space for storing data, firmware, or code for many applications. 2. Serial Input/Output: The IC component utilizes a serial interface for both input and output operations. This allows for easy integration into systems that require serial communication or where space is limited. 3. High-Speed Performance: The M29W400DT55N6 operates at a high-speed level, providing a fast access time. It is designed to support high-performance applications that demand quick data retrieval and programming. 4. Low Power Consumption: This flash memory chip is power-efficient and consumes low power during operation, making it suitable for battery-powered devices or applications where power efficiency is crucial. 5. Sector Erase Architecture: The memory organization is divided into multiple sectors, enabling efficient sector-by-sector erase and program operations

In Stock: 83

MOQ
1PCS
Packaging
48-TFSOP (0.724", 18.40mm Width)
Delivery Time
Ship Within 48 Hours
Shipping Origin
Shenzhen or Hong Kong Warehouse

Quantity

Get pricing info from knowledgeable sales

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