M29W320DB70N6

The M29W320DB70N6 is an IC component, specifically a 32 Megabit (4M x 8 or 2M x 16) CMOS 3.0V Flash Memory. Here are the key features of this IC component: 1. Memory Capacity: The M29W320DB70N6 has a memory capacity of 32 Megabits, which translates to 4 Megabytes. It is organized as either 4M x 8 (byte mode) or 2M x 16 (word mode) memory cell array. 2. Low Voltage Operation: This IC works at a low voltage of 3.0 volts, making it suitable for power-sensitive applications and devices that require low-power consumption. 3. Flash Memory Technology: The M29W320DB70N6 utilizes flash memory technology, which allows for non-volatile data storage. It provides a reliable and efficient solution for various applications. 4. High-Speed Performance: This IC component offers fast programming times, typically within 10 microseconds per byte. It also features a fast access time, allowing for quick data retrieval and processing. 5. Erase Functionality: The M29W320DB70N6 supports both byte-wise and block-wise erasure modes. It enables the erasing of specific portions of the memory or the entire memory contents, as per application requirements