AT29C512-90TC

Name: AT29C512-90TC
Brand: Microchip Technology
SKU: 0564E3-DS
Availability: InStock

IC FLASH 512KBIT PARALLEL 32TSOP

1 : $0.0000

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Dasenic Part Number

0564E3-DS

Manufacturer

Microchip Technology

Manufacturer Part #

AT29C512-90TC

Customer Reference

Datasheet

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Sample

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28 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

32-TFSOP (0.724", 18.40mm Width)

Quantity

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Manufacturer	Microchip Technology
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	0°C ~ 70°C (TC)
Package / Case	32-TFSOP (0.724", 18.40mm Width)
Technology	FLASH
Supplier Device Package	32-TSOP
Memory Size	512Kb (64K x 8)
Memory Type	Non-Volatile
Voltage - Supply	4.5V ~ 5.5V
Access Time	90 ns
Memory Format	FLASH
Memory Interface	Parallel
Write Cycle Time - Word, Page	10ms

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	Vendor is not defined
US ECCN	Provided as per user requirements
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The AT29C512-90TC is an Integrated Circuit (IC) component that belongs to the AT29C series, manufactured by Microchip Technology. This component is a high-performance electrically erasable and programmable read-only memory (EEPROM) device. Let's delve into its key features: 1. Memory Capacity: The AT29C512-90TC is designed with a storage capacity of 512 kilobits (64 kilobytes). This means it can store a substantial amount of data, making it suitable for various applications. 2. High-Speed Operation: With a maximum access time of 90 nanoseconds, this IC offers rapid read and write operations. It allows for quick data retrieval and updating, enhancing overall system performance. 3. Low Power Consumption: The AT29C512-90TC is optimized for power efficiency, minimizing energy consumption during operation. This feature makes it ideal for battery-operated devices where power conservation is crucial. 4. EEPROM Technology: Being an EEPROM device, the AT29C512-90TC enables data to be electrically erased and reprogrammed, as opposed to one-time programmable memories. This feature grants flexibility and allows for data modifications as needed