The IR2125STRPBF is an integrated circuit (IC) component developed by Infineon Technologies. It is a high voltage, high-speed power MOSFET and IGBT gate driver.
Key features of the IR2125STRPBF include:
1. High voltage capability: The IC can handle voltages up to 600V, making it suitable for a wide range of applications in various industries.
2. Gate drive output: It provides a high peak output current of up to 200mA to efficiently drive the power MOSFET or IGBT gate. This ensures fast and reliable switching, minimizing power losses.
3. Bootstrapped operation: The IC uses a bootstrap technique to generate a gate drive voltage that is higher than the supply voltage, allowing it to effectively drive high-side devices without requiring additional gate drive power supplies.
4. Under-voltage lockout (UVLO): The IC incorporates an internal UVLO circuit that monitors the supply voltage and prevents the gate driver from operating below the specified minimum voltage. This helps protect the power devices from erratic behavior under low voltage conditions and ensures the reliability of the overall system.
5. Shutdown function: The IC includes a shutdown input pin that can be used to disable the gate drive output and put the device in a low-power state. This feature enables efficient power management and facilitates system control.
6. Integrated bootstrap diode: The IC integrates a bootstrap diode, eliminating the need for an external diode connection
