The IC component S29GL01GT13DHNV10 is a high-performance, 1-gigabit (Gb) NAND Flash memory device manufactured by Cypress Semiconductor. It is designed to meet the demands of various embedded applications where high-density storage and fast data access are required. Here are some key features:
1. Memory Capacity: With a capacity of 1 Gb, this IC is capable of storing a large amount of data. It is suitable for applications that require significant storage space such as consumer electronics, automotive systems, and industrial equipment.
2. High-Speed Data Access: The S29GL01GT13DHNV10 offers fast read and write access times, ensuring efficient data retrieval and storage operations. It supports random access times as low as 10 ns, enabling quick and responsive performance in demanding applications.
3. Page Program and Erase Capabilities: This IC component enables individual data programming at the page level. It employs a page program operation, allowing users to modify data in small portions rather than erasing and rewriting the entire memory block. Moreover, it supports block erase operations, facilitating efficient memory management.
4. Reliable and Durable: Cypress Semiconductor has integrated advanced error correction code (ECC) algorithms into this component, enhancing its reliability and data integrity. It also encompasses various features like data protection and immunity to noise disturbances, ensuring reliable operation in challenging environments
