The S29GL01GS10TFI010 is a high-performance, 1-gigabit (1 Gb) single-voltage flash memory device developed by Cypress Semiconductor. This IC component is part of the Cypress GL-S series, designed specifically for high-density storage and embedded systems. Here are some key features of the S29GL01GS10TFI010:
1. Density and Organization: The S29GL01GS10TFI010 offers a 1 Gb storage capacity, making it suitable for storage-intensive applications. It operates with a x16 data bus, providing a higher data throughput compared to x8 devices.
2. High-Speed Performance: This flash memory component supports a fast read access time of 70 nanoseconds (ns). It also features an efficient program and erase architecture, reducing the overall power consumption and improving performance.
3. Extended Data Retention: The S29GL01GS10TFI010 offers excellent data retention capabilities, with a minimum of 20-year data retention period. This ensures data integrity for long-term storage applications.
4. Versatile Functionality: It provides a wide operating voltage range from 2.7V to 3.6V, allowing integration into various systems
