FM21L16-60-TG

The FM21L16-60-TG is an Integrated Circuit (IC) component that offers non-volatile memory storage. Developed by Cypress Semiconductor, this IC is a Ferroelectric Random Access Memory (FRAM) device with a storage capacity of 16 Kilobits (Kb). FRAM technology combines the advantages of both non-volatile memory (such as Flash memory) and volatile memory (such as SRAM). It provides high-speed, low-power, and high-endurance data storage capabilities. Here are the key features of the FM21L16-60-TG IC component: 1. Non-volatile memory: The FM21L16-60-TG offers non-volatile storage, which means that data remains stored even when power is disconnected. This makes it ideal for applications that require reliable and persistent data storage. 2. High-speed read/writes: This IC provides fast read and write access times, allowing for efficient data transfers. It offers a maximum frequency of 3 MHz for both read and write operations. 3. Low power consumption: The FM21L16-60-TG has a low power consumption design, making it suitable for applications that require energy-efficient operation. It features an active current of only 1