The CY7S1041GE30-10BVXI is an IC component manufactured by Cypress Semiconductor Corporation, a leading provider of high-performance integrated circuits. This specific component is a 4-Mbit (512K x 8) Static Random-Access Memory (SRAM) organized as 65,536 words of 8 bits each. Here is an overview of its key features:
1. Memory Capacity: The CY7S1041GE30-10BVXI offers a memory capacity of 4 megabits, which allows the storage of 524,288 bytes of data.
2. High-Speed Operation: This SRAM component operates at a speed of 10 nanoseconds (tAA), ensuring fast and efficient data access and retrieval.
3. Low Power Consumption: It is designed to operate at a low power supply voltage (2.5V to 3.6V) and offers low active power and standby power consumption, making it suitable for low-power applications.
4. Organization and Interface: The IC is organized as 65,536 words, with each word consisting of 8 bits. It utilizes a simple parallel interface that enables easy integration with microcontrollers, processors, or any other digital systems.
5. Random Access: The CY7S1041GE30-10BVXI provides random access to any location within its memory array, allowing data to be read from or written to any address with equal efficiency
