CY7C1513KV18-250BZXC is a high-performance 18-Mbit synchronous dual-port Static Random Access Memory (SRAM) integrated circuit (IC) component that is designed and manufactured by Cypress Semiconductor Corporation. It is primarily used in applications requiring high-bandwidth and low latency random access memory access.
Key Features of CY7C1513KV18-250BZXC:
1. Dual-Port Architecture: CY7C1513KV18-250BZXC features two independent and asynchronous ports, which allows for simultaneous access from two separate devices or processors. This makes it ideal for applications requiring concurrent access from multiple sources.
2. High-Speed Performance: This IC component operates at a maximum speed of 250 MHz, providing fast and reliable data transfers. It supports a wide range of memory access modes, including burst read and write, individual read and write, and simultaneous read and write operations.
3. Large Memory Capacity: The CY7C1513KV18-250BZXC has a total memory capacity of 18 Megabits (2,097,152 words x 9 bits). This abundant memory allows for storing and accessing large quantities of data, making it suitable for data-intensive applications such as network switches and routers.
4. Low Latency: With a fast access time of 4.8 ns, this component ensures quick data retrieval, reducing processing delays
