The CY7C1265V18-450BZC is a high-performance synchronous random access memory (SRAM) integrated circuit (IC) component developed by Cypress Semiconductor. It is designed to provide a fast and reliable solution for applications requiring high-speed data storage and retrieval. The following is an overview of the key features of CY7C1265V18-450BZC:
1. Memory Capacity: The IC has a total memory capacity of 1,048,576 words, with each word consisting of 18 bits. This results in a total storage capacity of 18 megabits (1.8 Mbytes).
2. Synchronous Operation: The CY7C1265V18-450BZC operates in synchronous mode, meaning it synchronizes data transfers with a system clock. This ensures reliable data transfers and allows for high-speed operation.
3. Fast Access Time: The IC offers a fast read access time of 4.5 nanoseconds (ns) and a fast write access time of 5.5ns. These short access times enable quick data retrieval and storage.
4. Low Power Consumption: The CY7C1265V18-450BZC is designed to minimize power consumption. It features various power-saving modes, including a deep power-down mode, enabling energy-efficient operation in battery-operated devices or power-sensitive applications
