CY7C1041G30-10BAJXE is an Integrated Circuit (IC) component that belongs to the CY7C1041G series, manufactured by Cypress Semiconductor Corporation. It is a low-power high-performance 1 Meg x 4 synchronous Burst Static Random Access Memory (SRAM) with a speed of up to 10 nanoseconds.
Key features of CY7C1041G30-10BAJXE include:
1. Memory Capacity: The IC has a memory capacity of 1 Meg x 4, which means it can store 1 Megabit of data organized as four separate 256K x 1 memory blocks.
2. Synchronous Burst Operation: The IC supports synchronous burst operation, allowing for fast and efficient data transfers. It uses a synchronous interface, simplifying the interfacing process with other devices.
3. Low Power Consumption: CY7C1041G30-10BAJXE is designed to consume minimal power. It operates on a low supply voltage and offers various power-saving features, making it suitable for applications where power efficiency is critical.
4. Access Time: The IC has a fast access time of 10 nanoseconds, enabling quick and responsive data retrieval. This makes it suitable for high-speed applications such as cache memory and real-time data processing systems.
5. Multiple Chip Enable Options: It provides multiple chip enable inputs, allowing for easy interfacing with other devices and optimizing memory space allocation
