The DS1220AB-200IND+ is an integrated circuit (IC) component, specifically a non-volatile static RAM (NVSRAM) module. It combines the functionalities of both RAM and non-volatile memory, offering high-performance data storage capabilities. Here is an overview of its key features:
1. Non-volatile Storage: Unlike traditional RAM modules, which lose their data when power is removed, the DS1220AB-200IND+ preserves its contents even during power loss or system failure. It achieves this by utilizing non-volatile memory technology, preventing data loss and ensuring reliability.
2. High Storage Capacity: The DS1220AB-200IND+ provides a storage capacity of 2,097,152 bits (256Kx8), allowing users to store a significant amount of data within the module. This capacity is essential for applications that require substantial memory storage.
3. Fast Read/Write Access: With access times as low as 70 nanoseconds, the DS1220AB-200IND+ delivers quick read and write operations, ensuring high-speed data transfer and efficient performance. This attribute is particularly beneficial for time-sensitive applications that require rapid data access.
4. Battery Backup Support: The IC component features an internal lithium energy source that can support the non-volatile memory elements in the absence of an external power supply. This further guarantees data retention during power interruptions and enhances data reliability
