The DS1220AB-100IND+ is an IC component manufactured by Maxim Integrated. It falls under the category of non-volatile static RAM (NVSRAM) modules. This specific model of the DS1220AB series offers a capacity of 2 kilobits (256 x 8 bits).
Key features of the DS1220AB-100IND+ include:
1. Non-Volatile Data Storage: The DS1220AB-100IND+ utilizes an NVSRAM architecture, which combines the benefits of both SRAM and EEPROM. This enables data to be retained even in the absence of power, making it suitable for applications that require non-volatile storage.
2. High-Speed Access: With an access time of 100 nanoseconds, the DS1220AB-100IND+ provides fast read and write operations, allowing for efficient data transfers.
3. Unlimited Write Endurance: Unlike traditional EEPROMs, the DS1220AB-100IND+ does not have a limited number of write cycles. This ensures that the data can be modified countless times without any degradation in performance.
4. Low Power Consumption: The IC component consumes very low power during standby mode, making it an energy-efficient choice for battery-powered devices.
5. Software and Hardware Data Protection: The DS1220AB-100IND+ supports both software and hardware data protection features, such as write protect pins and software write protection. These features prevent inadvertent data modification or erasure
