DS1220AB-100

The IC component DS1220AB-100 is a non-volatile static RAM (NVSRAM) developed by Maxim Integrated. It offers a combination of high-speed RAM and non-volatile storage in a single device, making it suitable for applications that require fast read/write operations with data retention even during power loss. One of the notable features of the DS1220AB-100 is its high density of 16,384 bits, organized into 2,048 words of 8 bits each. This allows for the storage of a significant amount of data in a compact form factor. Additionally, the DS1220AB-100 supports a fast access time of 120 nanoseconds, enabling quick retrieval and modification of information. The non-volatile storage capability of the DS1220AB-100 is achieved through a built-in lithium energy source, which ensures data retention even when the power supply is disconnected. This feature is especially useful in critical applications where data integrity is crucial, as it eliminates the need for external backup solutions. The DS1220AB-100 utilizes a standard 28-pin DIP (Dual Inline Package) for easy integration into existing circuitry. It operates on a single 5-volt power supply, making it compatible with a wide range of systems. Access to the DS1220AB-100's memory is facilitated by a straightforward parallel interface, allowing for seamless integration with common microcontrollers and other logic circuits