The AS6C1016-55ZIN is an integrated circuit (IC) component that belongs to the SRAM (Static Random Access Memory) family. It is a high-speed, low-power, 1-megabit (1M) memory chip that offers fast access times and operates at a voltage of 5V.
Here are key features of the AS6C1016-55ZIN:
1. Memory Capacity: The AS6C1016-55ZIN has a memory capacity of 1-megabit, which is equivalent to 128K x 8 bits. This allows it to store a significant amount of data.
2. SRAM Architecture: It follows the SRAM architecture, which means that it stores data in a latch-based memory cell, providing fast read and write access times and simplified control circuitry.
3. High-Speed Operation: The AS6C1016-55ZIN operates at a fast speed, allowing for quick data access. It has a maximum access time of 55 nanoseconds (ns), ensuring efficient processing of data.
4. Low Power Consumption: This IC component is designed with low-power requirements, making it suitable for various battery-powered applications. It consumes less power compared to other memory technologies, enhancing the overall energy efficiency of the system
