The IC component AS4C8M16SA-6BINTR is a high-speed asynchronous static random-access memory (SRAM) device manufactured by Alliance Memory. It is designed to provide fast and reliable data storage and retrieval capabilities for various electronic applications. Here are the key features and specifications of this IC component:
1. Memory Configuration: The AS4C8M16SA-6BINTR is organized as 8 Meg x 16 bits, offering a total capacity of 128 megabits (Mb). It consists of 8 million addresses, each containing 16 bits of data.
2. High-Speed Performance: This SRAM device operates at a frequency of up to 166 MHz, offering high-speed data transfer rates. It provides fast access times, allowing for efficient and quick data processing.
3. Asynchronous Interface: The AS4C8M16SA-6BINTR uses an asynchronous interface, meaning that it does not require a clock signal for read and write operations. This makes it suitable for applications that do not have precise timing requirements.
4. Low Power Consumption: This memory component is designed to operate with low power consumption, making it ideal for battery-powered devices or applications that prioritize energy efficiency.
5. Wide Voltage Range: The IC component supports a wide voltage range, from 2.2V to 3.6V, enabling it to work with different power supply levels
