The SIHG47N60AEF-GE3 is a high power discrete semiconductor component designed for use in various power applications. It is a N-channel Power MOSFET with a voltage rating of 600V and a current rating of 47A.
Key features of the SIHG47N60AEF-GE3 include a low on-resistance of 0.072 ohms, high power handling capability, and a fast switching speed. This MOSFET is housed in a TO-247 package, making it suitable for high power applications that require efficient heat dissipation.
Additionally, the SIHG47N60AEF-GE3 features a low gate charge and gate-source threshold voltage, allowing for easy drive and control. It is ideal for use in power supplies, motor controls, inverters, and other high power applications where reliability and performance are crucial. Overall, the SIHG47N60AEF-GE3 is a versatile and reliable discrete semiconductor component that offers high power handling capabilities and efficient switching performance
