The SI5515CDC-T1-GE3 is a discrete semiconductor component manufactured by Vishay Siliconix. It is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications.
Key features of the SI5515CDC-T1-GE3 include a low on-state resistance of 13m??? a continuous drain current of 39A, a gate threshold voltage range of 1 to 2V, and a maximum drain-source voltage of 30V. It is housed in a compact PowerPAK® SO-8 package, which is designed for high power density applications.
Additionally, this MOSFET is RoHS compliant and halogen-free, making it environmentally friendly. It is suitable for use in a wide range of applications, including power management, load switching, and motor control. Overall, the SI5515CDC-T1-GE3 offers a high-performance and reliable solution for various electronic systems
