SI3932DV-T1-GE3

MOSFET 2N-CH 30V 3.7A 6-TSOP

1 : $0.4230

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Dasenic Part Number

93D23A-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI3932DV-T1-GE3

Customer Reference

Datasheet

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21825 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOT-23-6 Thin, TSOT-23-6

Quantity

Unit Price

$ 0.423

Total

$ 0.42

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	FETs, MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power - Max	1.4W
Supplier Device Package	6-TSOP
F E T Type	2 N-Channel (Dual)
F E T Feature	Logic Level Gate
Drain to Source Voltage ( Vdss)	30V
Current - Continuous Drain ( Id) @ 25° C	3.7A
Rds On ( Max) @ Id, Vgs	58mOhm @ 3.4A, 10V
Vgs(th) ( Max) @ Id	2.2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	6nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds	235pF @ 15V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI3932DV-T1-GE3 is a discrete semiconductor component from Vishay Semiconductor. It is a dual N-channel TrenchFET power MOSFET with a maximum drain-source voltage of 30V and a continuous drain current of 6.1A. The MOSFET features low on-resistance, high thermal productivity, and low input/output capacitance, making it suitable for high-performance power management applications. The package type is PowerPAK 1212-8, which offers a compact size and efficient thermal performance. The SI3932DV-T1-GE3 is RoHS compliant and suitable for a wide range of industrial and consumer electronics applications where high efficiency and reliability are required