The SI3900DV-T1-E3 is a P-channel MOSFET transistor that is part of the discrete semiconductor components family. It is designed for high-speed switching applications in various electronic circuits.
Key features of the SI3900DV-T1-E3 include a drain-source voltage (VDS) rating of 20V, a continuous drain current (ID) of 2.7A, and a low on-state resistance (RDS(on)) of 124mΩ. This MOSFET also has a low gate threshold voltage (VGS(th)) of -1V, making it suitable for use in battery-powered devices or other low-voltage applications.
The SI3900DV-T1-E3 is housed in a small, surface-mount package that allows for easy integration into PCB designs. It is also RoHS-compliant, ensuring it meets environmental regulations for lead-free components. Overall, the SI3900DV-T1-E3 is a reliable and efficient MOSFET transistor for a variety of electronic applications
