The SI2302CDS-T1-GE3 is a small signal N-channel MOSFET manufactured by Vishay Siliconix. It is a discrete semiconductor component designed for use in a wide range of applications, including power management and switching circuits. With a compact SOT-23 package, this MOSFET offers high performance in a space-efficient form factor.
Key features of the SI2302CDS-T1-GE3 include a low on-resistance of 2.5 ohms, a maximum drain-source voltage of 20V, and a continuous drain current of 3.2A. This makes it suitable for low to medium power applications where efficiency, reliability, and thermal performance are important.
Additionally, the SI2302CDS-T1-GE3 has a fast switching speed and low gate threshold voltage, enabling precise control over current flow and power dissipation. Its robust design and high temperature tolerance make it suitable for operation in a wide range of environments.
Overall, the SI2302CDS-T1-GE3 is a versatile and reliable discrete semiconductor component that is well-suited for a variety of electronic designs where small size and high performance are essential
