The 2N5115 is a silicon NPN transistor specifically designed for high-power applications in a TO-5 metal can package. This versatile discrete semiconductor component is capable of handling up to 10 amps of continuous current and provides a maximum voltage rating of 250 volts. With a low saturation voltage of 1.1 volts and a high gain of 30-160, the 2N5115 offers excellent performance in a wide range of circuit configurations. Its rugged construction and small footprint make it ideal for use in power amplifiers, voltage regulators, and switching applications where high reliability and efficiency are critical. Additionally, the 2N5115 features a convenient base-emitter diode for fast switching and protection against reverse voltage spikes. Overall, this transistor is a reliable and cost-effective solution for demanding electronic designs that require high power handling capabilities
