The BCV62C,215 is a high voltage NPN bipolar junction transistor (BJT) discrete semiconductor component. It is designed for general-purpose amplifier and switching applications in low to medium power circuits.
Key features of the BCV62C,215 include a maximum collector-emitter voltage of 100V, a continuous collector current of 500mA, and a total power dissipation of 625mW. It has a high current gain (hfe) of 100-300 at a collector current of 100mA, which makes it suitable for amplification tasks.
The BCV62C,215 is housed in a SOT-23 surface mount package, making it easy to integrate into compact and space-constrained PCB designs. It also has a low saturation voltage and fast switching speed, making it ideal for applications where efficiency and speed are key considerations.
Overall, the BCV62C,215 is a versatile and reliable discrete semiconductor component that is well-suited for a wide range of general-purpose electronic applications
