The UCC27288DR is a high-speed, dual channel, low-side gate driver IC component designed for use in high-density power systems, especially those using Gallium Nitride (GaN) and Silicon Carbide (SiC) power MOSFETs. It is manufactured by Texas Instruments.
Key Features:
1. Dual Channel Driver: The UCC27288DR contains two independent high-speed drivers, which allows for driving two low-side power switches simultaneously in a half-bridge configuration. This reduces the component count and simplifies circuit design.
2. High-Speed Operation: The UCC27288DR has a high peak drive current capability of up to 4A and provides fast switching transitions. It enables efficient and reliable operation of GaN and SiC MOSFETs, allowing for high-frequency switching up to several MHz.
3. Fast Rise/Fall Times: With a typical rise and fall time of 4ns, the UCC27288DR ensures minimal power loss during switching and reduces the chances of cross-conduction resulting from slow turn-on/off.
4. Adaptive Dead-Time Control: The IC features an adaptive dead-time control unit, which actively adjusts the dead time between the high-side and low-side drivers to prevent shoot-through current. This eliminates the need for additional external components or complex calculations, simplifying the design process.
5. Wide Input Voltage Range: The IC supports a wide input voltage range, from 4
