The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny
6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved
power dissipation required for high frequency operation. The compound output driver stage includes
MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from
capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive
current variation with voltage and temperature. Undervoltage lockout protection is provided to
prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides
both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting
gate drive with a single device type.
