LM5109BSD/NOPB

Name: LM5109BSD/NOPB
Brand: Texas Instruments
SKU: 4EA8D9-DS
Price: 1.098 USD
Availability: InStock

1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity

1 : $1.0980

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Dasenic Part Number

4EA8D9-DS

Manufacturer

Texas Instruments

Manufacturer Part #

LM5109BSD/NOPB

Customer Reference

Datasheet

Download

Sample

Technical Support
Issue An Invoice
365 Days Warranty
Fast Refund

20400 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

DFN-8(4x4)

Quantity

Unit Price

$ 1.098

Total

$ 1.1

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Texas Instruments
Integrated Circuits (ICs)	Gate Drivers for Power MOSFETs and IGBTs
Product Status	Active
Operating Temperature	-40°C ~ 125°C (TJ)
Package / Case	8-WDFN Exposed Pad
Input Type	Non-Inverting
Supplier Device Package	8-WSON (4x4)
Voltage - Supply	8V ~ 14V
Channel Type	Independent
Driven Configuration	Half-Bridge
Number of Drivers	2
Gate Type	N-Channel MOSFET
Logic Voltage - V I L, V I H	0.8V, 2.2V
Current - Peak Output ( Source, Sink)	1A, 1A
High Side Voltage - Max ( Bootstrap)	108 V
Rise / Fall Time ( Typ)	15ns, 15ns

Kindly contact our sales Rep to obtain the data you desire for LM5109BSD/NOPB.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.