STGP10H60DF

TO-220 IGBTs

1 : $1.3950

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Dasenic Part Number

18B800-DS

Manufacturer

STMicroelectronics

Manufacturer Part #

STGP10H60DF

Customer Reference

Datasheet

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Sample

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5673 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-220

Quantity

Unit Price

$ 1.395

Total

$ 1.4

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	STMicroelectronics
Discrete Semiconductor Devices	Insulated Gate Bipolar Transistors (IGBTs)
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Input Type	Standard
Power - Max	115 W
Supplier Device Package	TO-220
Reverse Recovery Time (trr)	107 ns
Current - Collector ( Ic) ( Max)	20 A
Voltage - Collector Emitter Breakdown ( Max)	600 V
I G B T Type	Trench Field Stop
Vce(on) ( Max) @ Vge, Ic	1.95V @ 15V, 10A
Current - Collector Pulsed ( Icm)	40 A
Switching Energy	83µJ (on), 140µJ (off)
Gate Charge	57 nC
Td (on/off) @ 25° C	19.5ns/103ns
Test Condition	400V, 10A, 10Ohm, 15V
Base Product Number	STGP10

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.