RTU002P02T106

MOSFET P-CH 20V 250MA UMT3

1 : $0.3780

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Dasenic Part Number

987420-DS

Manufacturer

ROHM Semiconductor

Manufacturer Part #

RTU002P02T106

Customer Reference

Datasheet

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Sample

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14161 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SC-70, SOT-323 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 0.378

Total

$ 0.38

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	ROHM Semiconductor
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Not For New Designs
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Technology	MOSFET (Metal Oxide)
Supplier Device Package	UMT3
Power Dissipation ( Max)	200mW (Ta)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	20 V
Current - Continuous Drain ( Id) @ 25° C	250mA (Ta)
Rds On ( Max) @ Id, Vgs	1.5Ohm @ 250mA, 4.5V
Vgs(th) ( Max) @ Id	2V @ 1mA
Input Capacitance ( Ciss) ( Max) @ Vds	50 pF @ 10 V
Drive Voltage ( Max Rds On, Min Rds On)	2.5V, 4.5V
Vgs ( Max)	±12V
Base Product Number	RTU002
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.21.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The RTU002P02T106 is a discrete semiconductor component that is a P-channel MOSFET transistor. It has a maximum drain-source voltage of -20V and a continuous drain current of -2A. This transistor is designed for use in switching applications and offers low on-state resistance and low gate threshold voltage. The RTU002P02T106 is housed in a small SOT-23 package, making it ideal for space-constrained applications. It has a fast switching speed and low power dissipation, making it suitable for use in battery-powered devices. Overall, the RTU002P02T106 is a reliable and efficient semiconductor component for various electronic applications