The 2SB1694T106 is a PNP bipolar junction transistor (BJT) discrete semiconductor component designed for use in high-voltage, high-speed switching applications. This transistor has a maximum collector-emitter voltage of 20V, a collector current of 3A, and a power dissipation of 1W.
One key feature of the 2SB1694T106 is its high current gain, which makes it ideal for applications that require high amplification. It also has a low saturation voltage, which means that it can switch between on and off states quickly and efficiently.
Another important feature of the 2SB1694T106 is its compact size and lightweight design, making it easy to integrate into various electronic circuits and devices. It also has a wide operating temperature range, from -55°C to 150°C, ensuring reliable performance in a range of environmental conditions.
Overall, the 2SB1694T106 is a versatile and reliable semiconductor component that is well-suited for a wide range of high-speed switching applications
