The IKW50N60T is a discrete semiconductor component, specifically a power MOSFET designed for high power applications. It has a drain-source voltage rating of 600V and a continuous drain current of 50A, making it suitable for a wide range of power electronics applications.
Key features of the IKW50N60T include its low on-state resistance of 0.08 ohms, which helps to minimize power dissipation and improve efficiency. It also has a high avalanche energy rating of 480mJ, providing robust protection against voltage spikes and transient events. The MOSFET is housed in a TO-247 package, which offers good thermal performance and reliability.
The IKW50N60T is designed for use in high power switching applications such as motor control, power supplies, and inverters. Its high current and voltage ratings, along with its low on-state resistance, make it suitable for demanding applications that require high efficiency and reliability. Overall, the IKW50N60T is a high-performance power MOSFET that offers excellent power handling capabilities for a variety of industrial and commercial applications
