(0)

Images are for reference only.

HGTG30N60A4

Name: PIC16F15276-I/P
Brand: Microchip Technology
SKU: CF26B5-DS
Price: 3.132 USD
Availability: InStock

IGBT 600V 75A TO247-3

1 : $3.2850

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Dasenic Part Number

7C69A9-DS

Manufacturer

Onsemi

Manufacturer Part #

HGTG30N60A4

Customer Reference

Datasheet

Download

Sample

Technical Support
Issue An Invoice
365 Days Warranty
Fast Refund

1950 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-247-3 Tube

Quantity

Unit Price

$ 3.285

Total

$ 3.29

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Onsemi
Discrete Semiconductor Devices	Insulated Gate Bipolar Transistors (IGBTs)
Product Status	Obsolete
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Input Type	Standard
Power - Max	463 W
Supplier Device Package	TO-247-3
Current - Collector ( Ic) ( Max)	75 A
Voltage - Collector Emitter Breakdown ( Max)	600 V
Vce(on) ( Max) @ Vge, Ic	2.6V @ 15V, 30A
Current - Collector Pulsed ( Icm)	240 A
Switching Energy	280µJ (on), 240µJ (off)
Gate Charge	225 nC
Td (on/off) @ 25° C	25ns/150ns
Test Condition	390V, 30A, 3Ohm, 15V
Base Product Number	HGTG30

Kindly contact our sales Rep to obtain the data you desire for HGTG30N60A4.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The HGTG30N60A4 is a high power N-channel IGBT designed for high efficiency and high frequency switching applications. It offers a maximum collector-emitter voltage of 600V and a continuous collector current of 60A. This component features a fast switching speed and low switching losses, making it ideal for use in motor control, power supply, and renewable energy applications. The HGTG30N60A4 also has a low saturation voltage and a high input impedance, improving efficiency and reducing power consumption. Additionally, it has a TO-247 package type, providing thermal performance and easy mounting. Overall, the HGTG30N60A4 is a reliable and high-performance discrete semiconductor component for demanding applications

In Stock: 1950

MOQ

1PCS

Packaging

TO-247-3 Tube

Delivery Time

Ship Within 48 Hours

Shipping Origin

Shenzhen or Hong Kong Warehouse

Quantity

Unit Price

$ 3.285

Total

$ 3.29

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Delivery

Payment

Related Categories

RF FETs, MOSFETs

FETs, MOSFETs

Intelligent Power Modules (IPMs)

Insulated Gate Bipolar Transistors (IGBTs)

Junction Field-Effect Transistors (JFETs)

DIACs, SIDACs

Environmental Information	Material Declaration HGTG30N60A4 onsemi RoHS
PCN Design/Specification	Dimension/Color Change 24/Feb/2021 Logo 17/Aug/2017
PCN Packaging	Mult Devices 24/Oct/2017 Packing quantity increase 28/Dec/2020

HGTG30N60A4

1950 In Stock

In Stock: 1950

Related Products