(0)

Images are for reference only.

HGTG11N120CND

Name: HGTG11N120CND
Brand: Onsemi
SKU: 97BD4B-DS
Price: 2.691 USD
Availability: InStock

298W 43A 1200V NPT TO-247AC-3 IGBTs

1 : $2.6910

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Dasenic Part Number

97BD4B-DS

Manufacturer

Onsemi

Manufacturer Part #

HGTG11N120CND

Customer Reference

Datasheet

Download

Sample

Technical Support
Issue An Invoice
365 Days Warranty
Fast Refund

6447 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-247AC-3

Quantity

Unit Price

$ 2.691

Total

$ 2.69

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Onsemi
Discrete Semiconductor Devices	Insulated Gate Bipolar Transistors (IGBTs)
Product Status	Not For New Designs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Input Type	Standard
Power - Max	298 W
Supplier Device Package	TO-247-3
Reverse Recovery Time (trr)	70 ns
Current - Collector ( Ic) ( Max)	43 A
Voltage - Collector Emitter Breakdown ( Max)	1200 V
I G B T Type	NPT
Vce(on) ( Max) @ Vge, Ic	2.4V @ 15V, 11A
Current - Collector Pulsed ( Icm)	80 A
Switching Energy	950µJ (on), 1.3mJ (off)
Gate Charge	100 nC
Td (on/off) @ 25° C	23ns/180ns
Test Condition	960V, 11A, 10Ohm, 15V
Base Product Number	HGTG11
Packaging	Tube

Kindly contact our sales Rep to obtain the data you desire for HGTG11N120CND.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	Vendor omitted MSL Rating information
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The HGTG11N120CND is a discrete semiconductor component from Infineon Technologies, specifically a IGBT (Insulated Gate Bipolar Transistor) module. It is designed for high power applications, offering a voltage rating of 1200V and a current rating of 22A. The HGTG11N120CND features a low VCE(sat) for minimal power loss, and a fast switching speed for improved efficiency. It also has built-in protection features such as short circuit and overcurrent protection. The module is compact and easy to integrate into power electronics systems, making it ideal for industrial and automotive applications. With its high reliability and performance, the HGTG11N120CND is a popular choice for high power switching applications

In Stock: 6447

MOQ

1PCS

Packaging

TO-247AC-3

Delivery Time

Ship Within 48 Hours

Shipping Origin

Shenzhen or Hong Kong Warehouse

Quantity

Unit Price

$ 2.691

Total

$ 2.69

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Delivery

Payment

Related Categories

Insulated Gate Bipolar Transistors (IGBTs)

Special Purpose Transistors

Diode Arrays

IGBT Modules

Pre-biased Bipolar Transistor Arrays

RF FETs, MOSFETs

Environmental Information	Material Declaration HGTG11N120CND onsemi REACH onsemi RoHS
PCN Design/Specification	Dimension/Color Change 24/Feb/2021 Logo 17/Aug/2017 Mult Dev 02/May2023
PCN Packaging	Mult Devices 24/Oct/2017 Packing quantity increase 28/Dec/2020

HGTG11N120CND

6447 In Stock

In Stock: 6447

Related Products