The FDG6335N is a type of discrete semiconductor component known as a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is designed for use in various electronic applications requiring high efficiency power switching. Key features of the FDG6335N include a low on-resistance of 56 mΩ, a continuous drain current of 14 A, and a maximum drain-source voltage of 30 V. This component also offers fast switching speeds, making it suitable for applications where rapid on/off transitions are required. Additionally, the FDG6335N is housed in a compact and lightweight SOT-23 package, making it easy to integrate into circuit designs with limited space constraints. Overall, the FDG6335N is a reliable and high-performance semiconductor component ideal for use in power management and control applications
