The IC component CY7C53120E4-40SXI is a high-performance synchronous, pipelined SRAM (Static Random Access Memory) device. It offers a wide range of features that make it suitable for various applications. Here is an overview of its key features:
1. Memory Capacity: The CY7C53120E4-40SXI has a memory capacity of 4 Megabits (512K words x 8 bits). This allows for significant data storage and retrieval capabilities.
2. Synchronous Design: It operates synchronously with a single clock input. The synchronous design ensures reliable and precise data transmission, keeping the whole system in sync.
3. Pipelined Architecture: This IC features a pipelined architecture which allows for continuous memory access without any idle time during write/read cycles. This minimizes latency and maximizes the overall system performance.
4. Fast Access Time: The CY7C53120E4-40SXI offers fast access times with read and write cycle times as low as 10 ns. This enables quick data retrieval and storage operations, enhancing system responsiveness.
5. Low Power Consumption: It is designed to minimize power consumption, making it suitable for power-sensitive applications. The IC supports both active and standby power modes, optimizing energy usage.
6. Voltage Compatibility: The IC operates on a supply voltage range of 3.15V to 3.45V
