The NVD5117PLT4G is a discrete semiconductor component, specifically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. It is designed for high-power, high-frequency switching applications in power supplies, motor control, and other devices.
Key features of the NVD5117PLT4G include a drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 23A, and a low on-resistance (RDS(on)) of 35mΩ. This MOSFET also has a fast switching speed, which allows for efficient power conversion and reduces power loss.
The NVD5117PLT4G is housed in a compact, surface-mount package, making it easy to incorporate into various circuit designs. It is also designed to operate over a wide temperature range, ensuring reliable performance in harsh environments. Overall, the NVD5117PLT4G offers high efficiency, performance, and reliability for a range of power electronics applications
