The MMUN2233LT1G is a discrete semiconductor component that is commonly used in various electronic devices and circuits. It is a NPN bipolar junction transistor (BJT) with a maximum collector current of 100mA, making it suitable for low power applications.
Key features of the MMUN2233LT1G include a low saturation voltage of 0.15V at 10mA, which helps to minimize power dissipation and improve efficiency. It also has a high current gain (hFE) of 100 to 300, providing amplification for small signals.
This transistor is housed in a compact SOT-23 package, making it easy to integrate into circuit designs with limited space. It has a maximum power dissipation of 225mW and a maximum operating temperature of 150°C, ensuring reliability in a wide range of operating conditions.
Overall, the MMUN2233LT1G is a versatile and reliable discrete semiconductor component that is well-suited for use in a variety of electronic applications
